Electronic properties of organic semiconductor interfaces
Dr. M. Knupfer, FWI-Dresden, Germany
The electronic properties and the energy level alignment of interfaces
between organic semiconductors and metals have been studied using
photoemission spectroscopy in the valence as well the core level region.
It is demonstrated that there are three different contributions to the
interface properties, a reduced metal work function, image charge
screening and a short-range interface dipole, which determine the energy
level alignment in cases without chemical interactions at the interface.
The implications of these contributions are discussed. In addition, it is
shown that a number of technically relevant interfaces is not free from
reactions at the interface.