Self-organised anisotropic strain engineering: A new concept for quantum
Dr. R. Noetzel
COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherland
Lateral ordering of quantum dots (QDs) in well-defined arrays and networks is one of the most challenging tasks for today’s nanomaterials science to be fulfilled for the realization of future quantum functional devices. We have established a new concept for creating such ordered arrays of QDs by self-organized epitaxy. The concept is based on self-organized anisotropic strain engineering of (In,Ga)As/GaAs superlattice templates on GaAs (100) and (311)B substrates. The well-defined one- and two-dimensional arrays and networks of InAs QDs formed on top of these templates by local strain recognition are of excellent structural and optical quality. This breakthrough, thus, allows for novel fundamental studies and device operation principles based on single and multiple carrier- and photon-, and coherent quantum interference effects.